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| SD101AWS-SD101CWS SCHOTTKY DIODES SOD-323 1.35(0.053) 1.15(0.045) 1.26(.050) 1.24(.048) FEATURES Low forward voltage drop Guard ring construction for transient protection Negligible reverse recovery time 1.80(0.071) 1.60(0.063) 2.70(0.106) 2.30(0.091) 1.80(0.071) 1.60(0.063) 2.70(0.106) 2.30(0.091) MECHANICAL DATA 0.4(0.016) .25(0.010) .177(.007) .089(.003) 1.00(.040) 0.80(.031) 0.1(0.004) MIN .305(0.012) .295(0.010) .72(0.028) .69(0.027) .08(.003) MIN Case: Molded plastic body Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Polarity symbols marked on case Marking: SD101AWS:S1, SD101BWS:S2, SD101CWS:S3 Dimensions in millimeters and (inches) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum ratings and electrical characteristics, Single diode @TA=25 C PARAMETER Peak repetitive peak reverse voltage Working peak reverse voltage DC Blocking voltage RMS Reverse voltage Forward continuous current Repetitive peak forward current @t<1.0s @t=10us Power dissipation Thermal resistance junction to ambient Storage temperature Electrical ratings @TA=25 PARAMETER Reverse breakdown voltage Fowrard voltage SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS SD101AWS SD101BWS SD101CWS SYMBOLS SYMBOLS SD101AWS 60 42 SD101BWS 50 35 15 50 2.0 200 300 -65 to +125 SD101CWS 40 28 UNITS VOLTS V mA mA A mW C/W C VRRM VRMS VDC VR(RMS) IFM IFRM Pd RJA TSTG V(BR)R Min. 60 50 40 Typ. Max. Unit V VF Reverse current Capacitance between terminals Reverse recovery time 0.41 0.40 0.39 1.00 0.95 0.90 0.2 2.0 2.1 2.2 1.0 V IRM CT trr uA pF ns Conditions IR=10uA IR=10uA IR=10uA IF=1.0mA IF=1.0mA IF=1.0mA IF=15mA IF=15mA IF=15mA VR=50V VR=40V VR=30V VR=0V,f=1.0MHz IF=IR=5mA Irr=0.1XIR,RL=100 www.shunyegroup.com RATINGS AND CHARACTERISTIC CURVES SD101AWS-SD101CWS FIG. 1- POWER DERATING CURVE 500 10 FIG. 2-TYPICAL FORWARD CHARACTERISTIC Pd.POWER DISSIPATION (mW) 400 IF,FORWARD CURRENT(mA) See Note1 B C 1.0 A 300 200 0.1 100 0 0 0.01 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 TA,AMBIENT TEMPERATURE( C) VR REVERSE VOLTAGE.(V) FIG.3- TYPICAL TOTAL CAPACITANCE VS REVERSE VOLTAGE 2 10 Tj=25 C f=1MHz FIG. 4- TYPICAL REVERSE CHARACTERISTICS CT, TOTAL CAPACITANCE(pF) TA=125 C IR,REVERSE CURRENT(uA) 1 TA=75 C 0.1 TA=25 C C B A 1 0.01 TA=0 C 0.001 TA=-65 C 0 0 10 20 30 40 50 0.0001 0 10 20 30 40 50 60 VR REVERSE VOLTAGE.(V) VR REVERSE VOLTAGE.(V) www.shunyegroup.com |
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